advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -40v lower gate charge r ds(on) 72m fast switching characteristic i d -4.5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice rohs-compliat product thermal data parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 storage temperature range continuous drain current 3 -3.6 pulsed drain current 1 -20 parameter drain-source voltage gate-source voltage continuous drain current 3 200806201 1 AP9566GM rating -40 + 20 -4.5 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - - 72 m ? ?
AP9566GM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 10 20 30 40 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10 v -7.0 v -6.0 v -5.0 v v g = -4.0 v 0 10 20 30 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10 v -7.0 v -6.0 v -5.0 v v g = -4.0 v 50 60 70 80 90 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-3a t a =25 : 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-4a v g =-10v 1 1.4 1.8 2.2 2.6 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 3
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform AP9566GM t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 200 400 600 800 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 14 0 4 8 12 16 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -4a v ds = -32v 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 4
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